Method and system for providing a reliable light emitting diode semiconductor device

ABSTRACT

A method and a system for a reliable LED semiconductor device are provided. In one embodiment, the device comprises a carrier, a light emitting diode disposed on the carrier, an encapsulating material disposed over the light emitting diode and the carrier, at least one through connection formed in the encapsulating material, and a metallization layer disposed and structured over the at least one through connection.

TECHNICAL FIELD

The present invention relates generally to a reliable light emittingdiode (LED) semiconductor device. In particular, the present disclosurerelates to a method and system for encapsulating and embedding LEDs toprovide a reliable LED semiconductor device.

BACKGROUND

LEDs have been used widely in many applications due to its light sensingcapability. In many current semiconductor applications, LEDs are mounteddirectly on a printed circuit board as individual components andelectrically connected to other components, such as power and logiccomponents, on the board. In other applications, LEDs are placed intosemiconductor devices using silicone or silicon-based materials. Thesematerials, however, has poor performances due to its high coefficient ofthermal expansion (CTE), poor adhesive to metal and high moisturepermeability. Therefore, a need exists for a method and system toprovide a reliable LED semiconductor device that provides a betterperformance.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A to 1E are diagrams illustrating an exemplary process forforming a reliable LED semiconductor device accordance with oneembodiment of the present disclosure.

FIG. 2 is a flowchart of an exemplary process for forming a reliable LEDsemiconductor in accordance with one embodiment of the presentdisclosure.

FIGS. 3A to 3E are diagrams illustrating a reliable LED semiconductorpackage in accordance with one embodiment of the present disclosure.

FIG. 4 is a flowchart of an exemplary process for forming a reliable LEDsemiconductor package in accordance with one embodiment of the presentdisclosure.

SUMMARY OF INVENTION

The present disclosure provides a reliable LED semiconductor device. Inone embodiment, the device comprises a carrier, a light emitting diodedisposed on the carrier, an encapsulating material disposed over thelight emitting diode and the carrier, at least one through connectionformed in the encapsulating material, and a metallization layer disposedand structured over the at least one through connection.

In another embodiment, the device comprises a carrier, a light emittingdiode and at least one semiconductor chip disposed on the carrier, anencapsulating material disposed over the light emitting diode, the atleast one semiconductor device and the carrier, at least one throughconnection formed in the encapsulating material, and a metallizationlayer disposed and structured over the at least one through connection.

In yet another embodiment, a method for forming a reliable LEDsemiconductor device is provided. The method comprises providing acarrier, disposing at least one light emitting diode on the carrier,encapsulating the at least one light emitting diode and the carrier withan encapsulating material, forming at least one through connection inthe encapsulating material, and forming a metallization layer over theat least one through connection.

DETAILED DESCRIPTION

In the following Detailed Description, reference is made to theaccompanying drawings, which form a part hereof, and in which is shownby way of illustration specific embodiments in which the invention maybe practiced. In this regard, directional terminology, such as “top,”“bottom,” “front,” “back,” “leading,” “trailing,” etc., is used withreference to the orientation of the Figure(s) being described. Becausecomponents of embodiments can be positioned in a number of differentorientations, the directional terminology is used for purposes ofillustration and is in no way limiting. It is to be understood thatother embodiments may be utilized and structural or logical changes maybe made without departing from the scope of the present invention. Thefollowing detailed description, therefore, is not to be taken in alimiting sense, and the scope of the present invention is defined by theappended claims.

It is to be understood that the features of the various exemplaryembodiments described herein may be combined with each other, unlessspecifically noted otherwise.

Devices with semiconductor chips are described below. The semiconductorchips may be of extremely different types, may be manufactured bydifferent technologies and may include for example, integratedelectrical or electro-optical circuits or passives or MEMS etc.Semiconductor chips may be configured, for example, as powertransistors, power diodes, IGBTs (Isolated Gate Bipolar Transistors).Semiconductor chips may have a vertical structure and may be fabricatedin such a way that electrical currents can flow in a directionperpendicular to the main surfaces of the semiconductor chips. Thesesemiconductor chips may have contact elements disposed on its mainsurfaces, which includes a top surface and a bottom surface. Examples ofsemiconductor chips having a vertical structure include powertransistors and power diodes. In case of power transistors, the sourceelectrode and the gate electrode may be disposed on a first main surfacewhile the drain electrode may be disposed on a second main surface. Incase of a power diode, the anode electrode may be disposed on a firstmain surface while the cathode electrode may be disposed on a secondmain surface.

The integrated circuits may, for example, be designed as logicintegrated circuits, analog integrated circuits, mixed signal integratedcircuits, power integrated circuits, memory circuits or integratedpassives. Furthermore, the semiconductor chips may be configured as MEMS(micro-electro mechanical systems) and may include micro-mechanicalstructures, such as bridges, membranes or tongue structures. Thesemiconductor chips may be configured as sensors or actuators, forexample, pressure sensors, acceleration sensors, rotation sensors,microphones etc. The semiconductor chips may be configured as antennasand/or discrete passives. The semiconductor chips may also includeantennas and/or discrete passives. Semiconductor chips, in which suchfunctional elements are embedded, generally contain electronic circuitswhich serve for driving the functional elements or further processsignals generated by the functional elements. The semiconductor chipsneed not be manufactured from specific semiconductor material and,furthermore, may contain inorganic and/or organic materials that are notsemiconductors, such as for example, discrete passives, antennas,insulators, plastics or metals. Moreover, the semiconductor chips may bepackaged or unpackaged.

The semiconductor chips have contact elements which allow electricalcontact to be made with the semiconductor chips. The contact elementsmay be composed of any desired electrically conductive material, forexample, of a metal, such as aluminum, nickel, palladium, gold orcopper, a metal alloy, a metal stack or an electrically conductiveorganic material. The contact elements may be situated on the activemain surfaces of the semiconductor chips or on other surfaces of thesemiconductor chips. The active or passive structures of thesemiconductor chips are usually arranged below the active main surfacesand can be electrically contacted via the contact elements. In case ofpower transistors, the contact elements may be drain, source or dateelectrodes.

The devices described in the following may include external contactelements that are accessible from outside of the devices to allowelectrical contact to be made from outside of the devices. In addition,the external contact elements may be thermally conductive and serve asheat sinks for heat dissipation of the semiconductor chips. The externalcontact elements may be composed of any electrically conductivematerial, for example, a metal such as copper, Pd, Ni, Au, etc.

The devices described in the following may include an encapsulatingmaterial covering at least parts of the semiconductor chips. Theencapsulating material is an electrically insulating material, which isat most marginally electrically conductive relative to the electricallyconductive components of the device. Examples of an encapsulatingmaterial include a mold material and an epoxy based material. Theencapsulating material may be any appropriate duroplastic,thermoplastic, laminate (prepreg) or thermosetting material and maycontain filler materials. Various techniques may be employed to coverthe semiconductor chips with the mold material, for example, compressionmolding, lamination or injection molding.

The present disclosure provides a method and system for a reliable LEDsemiconductor device by encapsulating LEDs with a special encapsulatingmaterial that is highly transparent, in particular, to the blue colorspectrum, and has good adhesion to metals. In addition, the transparentencapsulating material has a low coefficient of thermal expansion andstability under high temperature. The resulting device is thereforeeasily integrated with other semiconductor devices and processes withoutaffecting the performance of the LEDs.

Referring to FIGS. 1A to 1E, diagrams illustrating an exemplary processfor forming a reliable LED semiconductor device are depicted inaccordance with one embodiment of the present disclosure. As shown inFIG. 1A, a reliable LED semiconductor device 100 is provided whichcomprises a carrier 102 serving as a lead frame. The carrier 102 may bemade of metals, ceramics, plastics or any other types of material. Thecarrier 102 may be a structured or unstructured lead frame. An adhesivelayer 104 is then applied over the carrier 102 for attaching the LED106. The adhesive layer 104 may be made of any adhesive material, suchas metallic glue. LED 106 is placed onto the carrier 102 over theadhesive layer 104. The LED 106 may comprise a first electrical contact108 disposed on the back surface 110 of LED 106 and a second electricalcontact 112 disposed on the top surface 114 of LED 106.

Referring to FIG. 1B, a highly transparent encapsulating material 120 isapplied to encapsulate carrier 102 and LED 106. In one embodiment, theencapsulating material may be a reliable polymer material, such asacrylic resins, ormocers, epoxy-acrylate copolymer, silicon epoxycopolymer, etc. Alternatively, the encapsulating material may be made ofother polymer materials such as epoxy resins, which increases elasticityof the structure and provides good light transmission for a givenwavelength range.

These types of encapsulating material have a very low light absorptionin the full range of LED light wavelengths, but particularly, in a shortwavelength range. In one example, these types of encapsulating materialhave a light absorption of less than five percent, but preferably lessthan one percent, over a full range of LED light wavelengths. The LEDwavelengths may range anywhere from infrared to ultra-violet.

In addition, these materials provide excellent adhesion to metals, inparticular, to copper surfaces, and other types of materials, such aspolymers and ceramics. These materials also have a low coefficient ofthermal expansion, for example, less than 50 ppm/K, which providesstability even in high temperature, for example, temperature greaterthan 150° C. The encapsulating material 120 may be applied by molding orother encapsulation methods.

Optionally, a thin metal layer 122 is applied over the encapsulatingmaterial 120. The metal layer 122 may be made of metals such as copperto provide a RCC film. The metal layer 122 may serve as a heat sink ordissipation for the structure or electrical contacts and redistributionlayer for the LED 106. The thickness of the metal layer 122 may be a fewmicrometers. However, metal layer 122 may be made of other types ofmetals or may have different thickness without departing the spirit andscope of the present disclosure.

Referring to FIG. 1C, a plurality of via openings 124, 126 are formed inthe encapsulating material 120 and optionally, the metal layer 122, toprovide through connections to the electrical contacts 108 and 112 ofLED 106. For example, via opening 124 is formed to provide a throughconnection to first electrical contact 108 disposed on the back surface110 of LED 106. Via opening 126 is formed to provide a throughconnection to the second electrical contact 112 disposed on the topsurface 114 of LED 106.

In one embodiment, the plurality of via openings 124, 126 may be formedusing laser drilling or plasma etching. However, other methods forforming the plurality of via openings may be used without departing thespirit and scope of the present disclosure.

Referring to FIG. 1D, the plurality of via openings 124, 126 may befilled with a metal, such as copper, to form a metallization layer 128.To fill the plurality of via openings, a barrier layer may first bedeposited (e.g. sputtered) over the plurality of via openings, in thisexample, via openings 124, 126 and optionally the metal layer 122. Thebarrier layer may be composed of an electrically conductive material,such as chrome or titanium or an alloy of different metals like titaniumand tungsten. Then, a seed layer may be deposited (e.g. sputtered) ontothe barrier layer. The seed layer may be composed of an electricallyconductive material, such as copper.

After a barrier and/or seed layer is applied, another layer ofelectrically conductive material, such as copper, or multiple layers ofsimilar or different electrically conductive materials, such as copper,nickel, gold or palladium is galvanically deposited. The electricallyconductive material may be copper or any other conductive metal, and mayconsist of a layer stack of different metals, such as Copper, Nickel andGold or copper, nickel and copper or copper, nickel and palladium.

Before the electrically conductive material is applied, a plating resistis placed over the barrier and/or seed layer. The plating resist may beplaced over the entire barrier and/or seed layer except the plurality ofvia openings, such as via openings 124, 126, and the wafer edge (edgeexclusion). Typically, the plating resist is exposed and developed afterapplication with photolithography mask (Mask Aligner) or a reticle(Stepper). Another possibility would be to structure the resist by laser(e.g. laser direct imaging) or apply the electrically conductivematerial already structured (e.g. printing). Dual damasceneredistribution is possible as well.

After electrically conductive material is applied into areas not coveredby the plating resist, the plating resist is stripped and the barrierand/or seed layer are removed chemically, for example, by wet etching.The plating resist may be removed easily with common resist strippingtechnique. The barrier and/or seed layer may be removed by wet etching.However, portions of the barrier and/or seed layer may be removed usingother methods without departing the spirit and scope of the presentdisclosure.

Referring to FIG. 1E, after the plating resist and the barrier and/orseed layer is removed, metallization layer 128 is formed. Themetallization layer 128 is then structured to provide electricalconnection to external component, such as a print circuit board. In thisexample, portions of the metallization layer 128 are removed byablation, such as photolithography. As shown in FIG. 1E, portion 130 ofmetallization layer 128 is removed by ablation, which in turn exposesthe highly transparent encapsulating material 120. The exposed highlytransparent encapsulating material 120 allows LED 106 to absorb a fullrange of LED light wavelengths 132, including the blue color spectrum.

Referring to FIG. 2, a flowchart of an exemplary process for forming areliable LED semiconductor package is depicted in accordance with oneembodiment of the present disclosure. Process 200 begins at step 202 toprovide a carrier as a lead frame. For example, a metal carrier 102 isprovided as a lead frame. Process 200 then continues to step 204 toplace an LED on the carrier over an adhesive layer. For example, LED 106is placed onto carrier 102 over adhesive layer 104.

Process 200 then continues to step 206 to encapsulate the LED and thecarrier with a highly transparent encapsulating material. For example,encapsulating material 120 is applied to encapsulate LED 106 and carrier102. The encapsulating material may be a reliable polymer material, suchas acrylic resins, epoxy-acrylate copolymer, or other materials such asepoxy resins, that provides elasticity of the structure and good lighttransmission in a given wavelength range.

Process 200 then continues to step 208 to optionally apply a metal layerover the encapsulating material. For example, a metal layer 122, made ofcopper, may be applied over the encapsulating material 120. Process 200then continues to step 210 to form a plurality of via openings in theencapsulating material and the optional metal layer to provide throughconnections to electrical contacts of the LED. For example, via openings124, 126 may be formed in metal layer 122 and encapsulating material 120using laser drilling or plasma etching to provide through connections tocontacts 114 and 108 of LED 106.

To protect contacts 114 and 108 from laser damage, an organic protectivelayer may be applied over the LED 106, including at least contacts 114and 108 of the LED 106. Alternatively, a thin organic layer, referred toas optional conversion layer may be applied between contacts 114 and 108of LED 106 and the organic sacrificial layer of the LED 106 to adjustthe LED emitted light wavelength to a desired color spectrum.

Process 200 then continues to step 212 to fill the plurality of viaopenings with a metal to form a metallization layer. For example, viaopenings 124, 126 may be filled with copper to form metallization layer128. Process 200 then completes at step 214 to structure themetallization layer. For example, portion 130 of metallization layer 128is removed by ablation to expose the transparent encapsulating material120.

In addition to an LED semiconductor device 100 as illustrated above, thepresent disclosure provides a method and system for a reliable LEDsemiconductor package, which embeds the LED semiconductor device alongwith other semiconductor devices, such as power and logic components.Referring to FIGS. 3A to 3E, diagrams illustrating a reliable LEDsemiconductor package are depicted in accordance with one embodiment ofthe present disclosure.

As shown in FIG. 3A, a plurality of semiconductor devices may be placedonto a carrier 302. For example, an LED 306, an integrated circuit 308for logic operations, and a power semiconductor device 310 may be placedonto carrier 302. In one embodiment, the semiconductor devices 306, 308,and 310 may be placed onto carrier 302 over adhesive layer 304.Semiconductor devices 306, 308, and 310 may comprise first electricalcontacts 312 on top surfaces 314 and second electrical contacts 316 onback surfaces 318 of devices 306, 308, and 310 for electricalconnections to external components.

Referring to FIG. 3B, a highly transparent encapsulating material 320 isapplied to encapsulate carrier 302, LED 306, IC 308, and power component310. In one embodiment, the highly transparent encapsulating material320 may be applied to encapsulate the LED 306, the carrier 302, the IC308 and the power component 310 together. In another embodiment, thehighly transparent encapsulating material may be disposed over the LED306 alone, to provide low light absorption, low thermal coefficient andgood adhesion to metals, while a second type of encapsulating material,or a common encapsulating material, such as epoxy, may be disposed overthe carrier 302, the IC 308 and the power component 310. In this way,the cost of encapsulation may be reduced.

In one embodiment, the encapsulating material 320 may be a reliablepolymer material, such as acrylic resins, ormocers, silicon epoxycopolymer, epoxy-acrylate copolymer, etc. Alternatively, theencapsulating material 320 may be made of other materials such as epoxyresins, which increases elasticity of the structure and provides goodlight transmission for a given wavelength range.

These types of encapsulating material have a very low light absorptionin the full range of LED light wavelengths, but particularly, in a shortwavelength range. In one example, these types of encapsulating materialhave a light absorption of less than five percent, but preferably lessthan one percent, over a full range of LED light wavelengths. The LEDwavelengths may range anywhere from infrared to ultra-violet.

In addition, these materials provide excellent adhesion to metals, inparticular, to copper surfaces, and other types of materials, such aspolymers and ceramics. These materials also have a low coefficient ofthermal expansion, for example, less than 50 ppm/K, which providesstability even in high temperature, for example, temperature greaterthan 150° C. The encapsulating material 320 may be applied by molding orother encapsulation methods.

Optionally, a thin metal layer 322 is applied over the encapsulatingmaterial 320. The metal layer 322 may be made of metals such as copperto provide a RCC film. The metal layer 322 may serve as a heat sink ordissipation for the structure or electrical contacts and redistributionlayer for devices 306, 308, and 310. The thickness of the metal layer322 may be a few micronmeters. However, metal layer 322 may be made ofother types of metals or may have different thickness without departingthe spirit and scope of the present disclosure.

Referring to FIG. 3C, a plurality of via openings 324, 326 are formed inthe encapsulating material 320 and optionally, the metal layer 322, toprovide through connections to the first electrical contacts 312 on topsurfaces 314 and second electrical contacts 316 on back surfaces 318 ofdevices 306, 308, and 310. In one embodiment, the plurality of viaopenings 324, 326 may be formed using laser drilling or plasma etching.However, other methods for forming the plurality of via openings may beused without departing the spirit and scope of the present disclosure.

Referring to FIG. 3D, the plurality of via openings 324, 326 may befilled with a metal, such as copper, to form a metallization layer 328.To fill the plurality of via openings 324, 326, a barrier layer mayfirst be deposited (e.g. sputtered) over the plurality of via openings,in this example, via openings 324, 326 and the optional metal layer 322.The barrier layer may be composed of an electrically conductivematerial, such as chrome or titanium or an alloy of different metalslike titanium and tungsten. Then, a seed layer may be deposited (e.g.sputtered) onto the barrier layer. The seed layer may be composed of anelectrically conductive material, such as copper.

After a barrier and/or seed layer is applied, another layer ofelectrically conductive material, such as copper, or multiple layers ofsimilar or different electrically conductive materials, such as copper,nickel, gold or palladium is galvanically deposited. The electricallyconductive material may be copper or any other conductive metal, and mayconsist of a layer stack of different metals, such as Copper, Nickel andGold or copper, nickel and copper or copper, nickel and palladium.

Before the electrically conductive material is applied, a plating resistis placed over the barrier and/or seed layer. The plating resist may beplaced over the entire barrier and/or seed layer except the plurality ofvia openings, such as via openings 324, 326 and the wafer edge (edgeexclusion). Typically, the plating resist is exposed and developed afterapplication with photolithography mask (Mask Aligner) or a reticle(Stepper). Another possibility would be to structure the resist by laser(e.g. laser direct imaging) or apply the electrically conductivematerial already structured (e.g. printing). Dual damasceneredistribution is possible as well.

After electrically conductive material is applied into areas not coveredby the plating resist, the plating resist is stripped and the barrierand/or seed layer are removed chemically, for example, by wet etching.The plating resist may be removed easily with common resist strippingtechnique. The barrier and/or seed layer may be removed by wet etching.However, portions of the barrier and/or seed layer may be removed usingother methods without departing the spirit and scope of the presentdisclosure.

Referring to FIG. 3E, after the plating resist and the barrier and/orseed layer are removed, metallization layer 328 is formed. Themetallization layer 328 is then structured to provide connection toexternal component, such as a print circuit board. In this example,portions of the metallization layer 328 are removed by ablation, such asphotolithography. As shown in FIG. 3E, portions 330 of metallizationlayer 328 are removed by ablation, which in turn exposes the highlytransparent encapsulating material 320. The exposed highly transparentencapsulating material 320 allows LED 306 to absorb a full range of LEDlight wavelengths 332, including the blue color spectrum.

Referring to FIG. 4, a flowchart of an exemplary process for forming areliable LED semiconductor package is depicted in accordance with oneembodiment of the present disclosure. Process 400 begins at step 402 toprovide a carrier as a lead frame. For example, a metal carrier 302 isprovided as a lead frame. Process 200 then continues to step 404 toplace an LED and at least one semiconductor chip on the carrier over anadhesive layer. For example, LED 306, integrated circuit 308, and powersemiconductor chip 310 are placed onto carrier 302 over adhesive layer304.

Process 400 then continues to step 406 to encapsulate the LED, the atleast one semiconductor chip and the carrier with a highly transparentencapsulating material. For example, encapsulating material 120 isapplied to encapsulate LED 306, integrated circuit 308, powersemiconductor chip 310 and carrier 302. The encapsulating material maybe a reliable polymer material, such as acrylic resins, epoxy-acrylatecopolymer, or other epoxy materials such as epoxy resins, that provideselasticity of the structure and provides good light transmission in agiven wavelength range.

Process 400 then continues to step 408 to optionally apply a metal layerover the encapsulating material. For example, a copper layer 322 may beapplied over the encapsulating material 320. Process 400 then continuesto step 410 to form a plurality of via openings in the encapsulatingmaterial and the optional metal layer to provide through connections toelectrical contacts of the LED. For example, via openings 324, 326 maybe formed in copper layer 322 and encapsulating material 320 using laserdrilling or plasma etching to provide through connections to contacts312 and 316 of devices 306, 308, and 310. To protect contacts 312 and316 from laser damage, an organic protective layer may be applied overthe LED 306, including at least contacts 312 and 316 of the LED 306.Alternatively, a thin organic layer, referred to as optional conversionlayer may be applied between contacts 312 and 316 of LED 306 and theorganic sacrificial layer of the LED 306 to adjust the LED emitted lightwavelength to a desired color spectrum.

Process 400 then continues to step 412 to fill the plurality of viaopenings with a metal to form a metallization layer. For example, viaopenings 324, 326 may be filled with copper to form metallization layer328. Process 400 then completes at step 414 to structure themetallization layer. For example, portions 330 of metallization layer328 are removed by ablation to expose the transparent encapsulatingmaterial 320.

Thus, the present disclosure also provides a method and a system forembedding LEDs in a semiconductor package along with other semiconductordevices by using a transparent encapsulating material. The method andsystem provide a reliable solution for embedding LEDs without damagingthe LED surface during the process and provide desirable properties forLED light absorption.

In addition, while a particular feature or aspect of an embodiment ofthe invention may have been disclosed with respect to only one ofseveral implementations, such feature or aspect may be combined with oneor more other features or aspects of the other implementations as may bedesired and advantageous for any given or particular application.Furthermore, to the extent that the terms “include”, “have”, “with”, orother variants thereof are used in either the detailed description orthe claims, such terms are intended to be inclusive in a manner similarto the term “comprise”. The terms “coupled” and “connected”, along withderivatives may have been used. It should be understood that these termsmay have been used to indicate that two elements co-operate or interactwith each other regardless whether they are in direct physical orelectrical contact, or they are not in direct contact with each other.Furthermore, it should be understood that embodiments of the inventionmay be implemented in discrete circuits, partially integrated circuitsor fully integrated circuits or programming means. Also, the term“exemplary” is merely meant as an example, rather than the best oroptimal. It is also to be appreciated that features and/or elementsdepicted herein are illustrated with particular dimensions relative toone another for purposes of simplicity and ease of understanding, andthat actual dimensions may differ substantially from that illustratedherein.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat a variety of alternate and/or equivalent implementations may besubstituted for the specific embodiments shown and described withoutdeparting from the scope of the present invention. This application isintended to cover any adaptations or variations of the specificembodiments discussed herein. Therefore, it is intended that thisinvention be limited only by the claims and the equivalents thereof.

What is claimed:
 1. A semiconductor device comprising: a carrier; alight emitting diode disposed on the carrier; an encapsulating materialdisposed over the light emitting diode; at least one through connectionformed in the encapsulating material; and a metallization layer disposedand structured over the at least one through connection.
 2. The deviceof claim 1, further comprising: a metal layer disposed over theencapsulating material.
 3. The device of claim 1, wherein theencapsulating material is a polymer material.
 4. The device of claim 3,wherein the polymer material is acrylic resin, ormocers, silicon epoxycopolymer or epoxy-acrylate copolymer.
 5. The device of claim 3, whereinthe polymer material is epoxy resin.
 6. The device of claim 1, whereinthe encapsulating material is a low light absorbing material absorbinglight in a full wavelength range.
 7. The device of claim 6, wherein theencapsulating material is a low light absorbing material absorbing lightin a short wavelength range of a full wavelength range.
 8. The device ofclaim 1, wherein the encapsulating material is highly transparent, andhas a low coefficient of thermal expansion.
 9. The device of claim 1,wherein the at least one through connection is at least one via openingto at least one contact of the light emitting diode.
 10. The device ofclaim 1, further comprising: an organic protective layer disposed overthe light emitting diode.
 11. The device of claim 9, further comprising:an optical conversion layer disposed between the at least one contactand an organic sacrificial layer of the light emitting diode.
 12. Asemiconductor device comprising: a carrier; a light emitting diode andat least one semiconductor chip disposed on the carrier; a first type ofencapsulating material disposed over the light emitting diode; a secondtype of encapsulating material disposed over at least one of the atleast one semiconductor chip and the carrier; at least one throughconnection formed in the encapsulating material; and a metallizationlayer disposed and structured over the at least one through connection.13. The device of claim 12, wherein the first type of encapsulatingmaterial is a polymer material.
 14. The device of claim 12, wherein thefirst type of encapsulating material and the second type ofencapsulating material is a same material.
 15. The device of claim 12,wherein the second type of encapsulating material is an epoxy.
 16. Thedevice of claim 12, wherein the first type of encapsulating material isa low light absorbing material absorbing light in a full wavelengthrange.
 17. The device of claim 16, wherein the first type ofencapsulating material is a low light absorbing material absorbing lightin a short wavelength range of the full wavelength range.
 18. The deviceof claim 12, wherein the first type of encapsulating material is highlytransparent and has a low coefficient of thermal expansion.
 19. Thedevice of claim 12, wherein the at least one semiconductor chipcomprises a power semiconductor chip and an integrated circuit.
 20. Thedevice of claim 12, wherein the at least one through connection is atleast one via opening to at least one contact of the light emittingdiode and at least one of the at least one semiconductor chip.
 21. Amethod for forming a semiconductor device comprising: providing acarrier; disposing at least one light emitting diode on the carrier;encapsulating the at least one light emitting diode with anencapsulating material; forming at least one through connection in theencapsulating material; and forming a metallization layer over the atleast one through connection.
 22. The method of claim 21, whereinencapsulating the at least one light emitting diode and the carrier withan encapsulating material comprises: encapsulating the at least onelight emitting diode and the carrier with an encapsulating materialhaving a low coefficient of thermal expansion.
 23. The method of claim21, wherein encapsulating the at least one light emitting diode with anencapsulating material comprises: encapsulating the at least one lightemitting diode with a low light absorbing material absorbing light in afull wavelength range.
 24. The method of claim 23, wherein encapsulatingthe at least one light emitting diode with an encapsulating materialcomprises: encapsulating the at least one light emitting diode with alow light absorbing material absorbing light in a short wavelength rangeof the full wavelength range.
 25. The method of claim 21, whereinencapsulating the at least one light emitting diode with anencapsulating material comprises: encapsulating the at least one lightemitting diode with an encapsulating material that is highlytransparent.
 26. The method of claim 21, further comprising: forming ametal layer over the encapsulating material.
 27. The method of claim 26,wherein forming at least one through connection in the encapsulatingmaterial comprises: forming at least one via opening in theencapsulating material and the metal layer.
 28. The method of claim 21,wherein forming a metallization layer over the at least one throughconnection comprises: filling the at least one through connection with ametal; and removing portions of the metal to expose the encapsulatingmaterial.
 29. The method of claim 21, further comprising: encapsulatingat least one semiconductor chip and the carrier with the encapsulatingmaterial
 30. The method of claim 21, further comprising: encapsulatingat least one semiconductor chip and the carrier with an encapsulatingmaterial different from the encapsulating material for encapsulating theat least one light emitting diode.